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| Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC4161 DESCRIPTION With TO-220F package High breakdown voltage. High reliability. Fast switching speed APPLICATIONS Switching Regulator Applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25ae Collector dissipation 2 Junction temperature Storage temperature 150 -55~150 ae ae CONDITIONS Open emitter Open base Open collector VALUE 500 400 7 7 14 3 30 W UNIT V V V A A A JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=5mA ; RBE= IC=1mA ; IE=0 IE=1mA ; IC=0 IC=4A ;IB=0.8A IC=4A ;IB=0.8A VCB=400V; IE=0 VEB=5V; IC=0 IC=0.8A ; VCE=5V IC=4A ; VCE=5V IC=10mA ; VCE=5V IE=0; VCB=10V;f=1MHz IC=0.8A ; VCE=10V 15 10 10 80 20 MIN 400 500 7 TYP. SYMBOL VCEO VCBO VEBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 hFE-3 COB fT 2SC4161 MAX UNIT V V V 0.8 1.5 10 10 50 |I |I V V A A pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=5A; IB1=1A IB2=-2A VCC=200V ,RL=40| 0.5 2.5 0.3 |I |I |I s s s hFE-1 Classifications L 15-30 M 20-40 N 30-50 JMnic Product Specification www.jmnic.com Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4161 Fig.2 Outline dimensions JMnic |
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